As people's awareness of energy consumption and environmental protection increases, traditional refrigeration technologies are gradually being replaced by new refrigeration technologies. Among them, semiconductor thermoelectric cooling technology has attracted considerable attention from researchers due to its efficiency, low energy consumption, and environmental friendliness.

The manufacturing of semiconductor thermoelectric cooling devices requires special materials and processes. Currently, commonly used semiconductor materials include silicon, germanium, and indium selenide. Among these, silicon and germanium have good heat resistance and are easy to process and manufacture, making them ideal choices for semiconductor thermoelectric cooling devices.

When selecting materials, it is crucial to choose appropriate materials based on their properties. Hardness, density, melting point, electrical conductivity, thermal conductivity, and thermal expansion coefficient are all factors that must be considered. Additionally, two key points need to be noted in material selection: first, whether the material has good thermoelectric performance; and second, whether the material is easy to dope and modify.

The manufacturing process of semiconductor thermoelectric cooling devices mainly includes three aspects: wafer preparation, etching, and interface interconnection. Wafer preparation methods include single crystal growth, thin film preparation, ion implantation, and doping. Single crystal growth is conducted at high temperatures and requires orientation of the wafer to control the shape, direction, and size of the crystal to ensure crystal quality. Thin film preparation involves creating thin film materials through methods such as magnetron sputtering, electroplating, and spray deposition. This method is advantageous because it is applicable to various materials and has low equipment requirements. Ion implantation refers to injecting ions released from the original wafer or thin film material into another material to alter its properties, while doping involves adding impurity elements during the fabrication process to adjust its electrical properties.

Etching refers to the method of removing unwanted parts through chemical reactions to form the substrate of the semiconductor thermoelectric cooling device. Common etching methods include physical etching and chemical etching. Physical etching utilizes high-speed particles to impact the target, causing physical or chemical changes to process the wafer, while chemical etching uses chemicals to corrode the material.

Interface interconnection refers to connecting the semiconductor thermoelectric cooling device with other circuits or devices. Common methods include welding and bonding. Welding involves heating a filler material and the chip until the filler melts and solidifies to create a metal joint, while bonding involves pressing the wafer or device against a substrate to ensure good contact between their materials, allowing charge or heat transfer.

In summary, the choice of materials and manufacturing processes for semiconductor thermoelectric cooling devices significantly impacts the performance and efficiency of the cooling plates. Implementing a scientifically rigorous manufacturing process is crucial for enhancing the performance of cooling systems.